Difference between revisions of "STS Pegasus 4/Processes/LNF Unswitched Poly"

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Revision as of 13:40, 22 November 2020

Warning Warning: This page has not been released yet.
About this Process
Process Details
Equipment STS Pegasus 4
Technology RIE
Material Silicon
Mask Materials not typical
Chemicals Used PR, SiO2
Gases Used SF6, C4F8, O2


LNF Unswitched Poly is a single-step mixed-gas process intended for shallow silicon and thin film poly- and amorphous silicon etches.

Procedure

Follow the standard operating procedure.

Parameters

Parameter Units Setpoint
ICP Power W 500
Bias Power W 20
Bias Pulsing Hz 40 (80%)
Pressure mTorr 5
C4F8 Flow sccm 50
SF6 Flow sccm 100
Ar Flow sccm 50
Chuck Temperature °C 20

Capabilities

Etch rate

Etch rate will vary with feature size and loading.

Material Etch Rate Uniformity
Silicon ? µm/min ?%

Mask selectivity

Material Etch Rate Uniformity
Silicon dioxide 90 Å/min 7%
Silicon nitride ? ?
SPR 220 250 Å/min 6%

Etch profile

Unknown.

Limitations

Etch length

This etch is designed for thin films and shallow etches. It is not characterized for long processes.

Feature size

Unknown

Open area

Unknown