Difference between revisions of "STS Pegasus 4/Processes/LNF Unswitched Poly"
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| − | <!-- Make sure to add any other relevant categories --> | + | <!-- Make sure to add any other relevant categories |
| − | {{#ifeq: {{NAMESPACE}} | Template | | [[Category:Processes]]}} | + | -->{{#ifeq: {{NAMESPACE}} | Template | | [[Category:Processes]]}}{{Infobox process |
| − | + | |image = STS Pegasus_4_Unswitched_Poly_1_um.jpg | |
| − | {{Infobox process | ||
| − | |image = | ||
|caption = | |caption = | ||
|technology = RIE | |technology = RIE | ||
|material = [[Silicon]] | |material = [[Silicon]] | ||
| − | |mask | + | |mask = [[Photoresist|PR]], [[Silicon dioxide|SiO<sub>2</sub>]] |
| − | + | |chemicals = | |
|gases = [[SF6|SF<sub>6</sub>]], [[C4F8|C<sub>4</sub>F<sub>8</sub>]], [[O2|O<sub>2</sub>]] | |gases = [[SF6|SF<sub>6</sub>]], [[C4F8|C<sub>4</sub>F<sub>8</sub>]], [[O2|O<sub>2</sub>]] | ||
|created = | |created = | ||
| Line 71: | Line 69: | ||
|- | |- | ||
| Silicon | | Silicon | ||
| − | | | + | | 0.8 µm/min |
| ?% | | ?% | ||
|} | |} | ||
| + | {{note|Etch rate is feature size dependent: narrow openings will etch slower than larger open areas.|reminder}} | ||
===Mask selectivity=== | ===Mask selectivity=== | ||
| Line 81: | Line 80: | ||
! Etch Rate | ! Etch Rate | ||
! Uniformity | ! Uniformity | ||
| + | |- | ||
| + | | SPR 220 | ||
| + | | 250 Å/min | ||
| + | | 6% | ||
|- | |- | ||
| Silicon dioxide | | Silicon dioxide | ||
| Line 87: | Line 90: | ||
|- | |- | ||
| Silicon nitride | | Silicon nitride | ||
| − | | | + | | 220 Å/min |
| − | | | + | | 4% |
| + | |- | ||
|- | |- | ||
| − | | | + | | Low stress nitride |
| − | | | + | | 180 Å/min |
| − | | | + | | 4% |
|} | |} | ||
===Etch profile=== | ===Etch profile=== | ||
| − | + | This process etches semi-isotropically. Vertical to lateral etch rate is approximately 2:1. | |
==Limitations== | ==Limitations== | ||
===Etch length=== | ===Etch length=== | ||
| − | This etch is designed for thin films and shallow etches. It is not characterized for long processes. | + | This etch is designed for thin films and shallow etches (< 2 µm). It is not characterized for long processes. |
===Feature size=== | ===Feature size=== | ||
| − | + | Remaining features that are narrower than the total depth will be etched away due to undercut during the etch. | |
===Open area=== | ===Open area=== | ||
Unknown | Unknown | ||
Revision as of 16:02, 1 March 2021
| About this Process | |
|---|---|
 | |
| Process Details | |
| Equipment | STS Pegasus 4 |
| Technology | RIE |
| Material | Silicon |
| Mask Materials | PR, SiO2 |
| Gases Used | SF6, C4F8, O2 |
LNF Unswitched Poly is a single-step mixed-gas process intended for shallow silicon and thin film poly- and amorphous silicon etches.
Contents
Procedure
Follow the standard operating procedure.
Parameters
| Parameter | Units | Setpoint |
|---|---|---|
| ICP Power | W | 500 |
| Bias Power | W | 20 |
| Bias Pulsing | Hz | 40 (80%) |
| Pressure | mTorr | 5 |
| C4F8 Flow | sccm | 50 |
| SF6 Flow | sccm | 100 |
| Ar Flow | sccm | 50 |
| Chuck Temperature | °C | 20 |
Capabilities
Etch rate
Etch rate will vary with feature size and loading.
| Material | Etch Rate | Uniformity |
|---|---|---|
| Silicon | 0.8 µm/min | ?% |
Etch rate is feature size dependent: narrow openings will etch slower than larger open areas.
Mask selectivity
| Material | Etch Rate | Uniformity |
|---|---|---|
| SPR 220 | 250 Å/min | 6% |
| Silicon dioxide | 90 Å/min | 7% |
| Silicon nitride | 220 Å/min | 4% |
| Low stress nitride | 180 Å/min | 4% |
Etch profile
This process etches semi-isotropically. Vertical to lateral etch rate is approximately 2:1.
Limitations
Etch length
This etch is designed for thin films and shallow etches (< 2 µm). It is not characterized for long processes.
Feature size
Remaining features that are narrower than the total depth will be etched away due to undercut during the etch.
Open area
Unknown
