STS Pegasus 4/Processes/LNF Unswitched Poly
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Revision as of 16:04, 1 March 2021 by Kjvowen (talk | contribs) (→Etch profile)
|About this Process|
|Equipment||STS Pegasus 4|
|Mask Materials||PR, SiO2|
|Gases Used||SF6, C4F8, O2|
LNF Unswitched Poly is a single-step mixed-gas process intended for shallow silicon and thin film poly- and amorphous silicon etches.
Follow the standard operating procedure.
|Bias Pulsing||Hz||40 (80%)|
Etch rate will vary with feature size and loading.
Etch rate is feature size dependent: narrow openings will etch slower than larger open areas.
|SPR 220||250 Å/min||6%|
|Silicon dioxide||90 Å/min||7%|
|Silicon nitride||220 Å/min||4%|
|Low stress nitride||180 Å/min||4%|
This process etches semi-isotropically. Vertical to lateral etch rate is approximately 2:1.
This etch is designed for thin films and shallow etches (< 2 µm). It is not characterized for long processes.
Remaining features that are narrower than the total depth will be etched away due to undercut during the etch.