Difference between revisions of "Silicon"

From LNF Wiki
Jump to navigation Jump to search
Line 28: Line 28:
 
**[[Tempress S3T3 - Flat Poly-Si 4”]]
 
**[[Tempress S3T3 - Flat Poly-Si 4”]]
 
**[[Tempress S6T3 - Flat Poly-Si 4”]]
 
**[[Tempress S6T3 - Flat Poly-Si 4”]]
 +
 +
===Poly silicon===
 +
 +
====Tempress S1T3 - N-type in Situ Doped Poly-Si 6"====
 +
{{main|Tempress S1T3 - N-type in Situ Doped Poly-Si 6"}}
 +
The Tempress S1T3 furnace tube is a CMOS clean, modular, horizontal furnace tube that uses the LPCVD process to deposit n-type doped poly-silicon.
 +
 +
====Tempress S3T3 - Flat Poly-Si 4"====
 +
{{main|Tempress S3T3 - Flat Poly-Si 4"}}
 +
The Tempress S3T3 furnace tube is a CMOS clean, modular, horizontal furnace tube that uses the LPCVD process to deposit poly-silicon, annealed poly-silicon and amorphous silicon.
 +
 +
====Tempress S6T3 - Flat Poly-Si 4"====
 +
{{main|Tempress S6T3 - Flat Poly-Si 4"}}
 +
The Tempress S6T3 furnace tube is a metals allowed, modular, horizontal furnace tube that uses the LPCVD process to deposit poly-silicon, annealed poly-silicon, and amorphous silicon.
 +
 +
===Doped Poly silicon===
 +
 +
====Tempress S3T4 - N-type in Situ Doped Poly-Si 4"====
 +
{{main|Tempress S3T4 - N-type in Situ Doped Poly-Si 4"}}
 +
The Tempress S3T4 furnace tube is a CMOS clean, modular, horizontal furnace tube that uses the LPCVD process to deposit n-type doped poly-silicon.
 +
 +
====Tempress S4T3 - P-type in Situ Doped Poly-Si 4"====
 +
{{main|Tempress S4T3 - P-type in Situ Doped Poly-Si 4"}}
 +
The Tempress S4T3 furnace tube is a CMOS clean, modular, horizontal furnace tube that uses the LPCVD process to deposit p-type doped poly-silicon.
 +
  
 
===Processes===
 
===Processes===

Revision as of 13:08, 21 September 2017

Warning Warning: This page has not been released yet.


Silicon
Material Details
Material Restriction Undefined



A description & relevant information for this material need to be added.

Applications

Discuss common uses/applications for this material.

Processing Tools

Process technologies that can be used to deposit/pattern this material. If this is a substrate, refer to what tool/process restrictions there may be and possibly remove the following sub-sections.

Equipment

Poly silicon

Tempress S1T3 - N-type in Situ Doped Poly-Si 6"

The Tempress S1T3 furnace tube is a CMOS clean, modular, horizontal furnace tube that uses the LPCVD process to deposit n-type doped poly-silicon.

Tempress S3T3 - Flat Poly-Si 4"

The Tempress S3T3 furnace tube is a CMOS clean, modular, horizontal furnace tube that uses the LPCVD process to deposit poly-silicon, annealed poly-silicon and amorphous silicon.

Tempress S6T3 - Flat Poly-Si 4"

The Tempress S6T3 furnace tube is a metals allowed, modular, horizontal furnace tube that uses the LPCVD process to deposit poly-silicon, annealed poly-silicon, and amorphous silicon.

Doped Poly silicon

Tempress S3T4 - N-type in Situ Doped Poly-Si 4"

The Tempress S3T4 furnace tube is a CMOS clean, modular, horizontal furnace tube that uses the LPCVD process to deposit n-type doped poly-silicon.

Tempress S4T3 - P-type in Situ Doped Poly-Si 4"

The Tempress S4T3 furnace tube is a CMOS clean, modular, horizontal furnace tube that uses the LPCVD process to deposit p-type doped poly-silicon.


Processes

  • List of chemical (or otherwise) processes for this material

References

Wikipedia Page