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<!-- Insert the tool description here -->
The Applied Materials P5000 PECVD system is a multi-chamber Plasma Enhanced Chemical Vapor Deposition ([[PECVD]]) tool with standard operating temperatures of 200-400C. Chamber A is configured for highly conformal [[Tetraethyl orthosilicate|TEOS]] (SiO<sub>2</sub>) film deposition, but is not available for processing at this timedue to lack of a chemical delivery cabinet. Chamber B is configured for silicon dioxide [[Silicon dioxide|(SiO<sub>2</sub>)]] and amorphous silicon [[Amorphous Silicon|(a-Si)]] film deposition with boron and phosphorous doping options. Chamber C is configured to deposit [[Silicon dioxide|SiO<sub>2</sub>]], [[Silicon Nitride|Si<sub>3</sub>N<sub>4</sub>]], and oxynitride ([[Oxynitride|SiO<sub>x</sub>N<sub>y</sub>]]) films. Wafers are transferred to the process chambers and are processed one at a time with deposition on only the top side of the substrate.
==Announcements==
*Lower processing temperatures (200-400°C) compared with typical furnace deposition temperatures (400-1100°C).
<!--==System Overview=='''Full system overview document can be found at:''' [https://docs.google.com/document/d/1Prm374eY-Wve4NbPmDy8i4fTEOGpgaSfCT-VfP_EYgM/edit?usp=sharing System_Overview]-->
===Hardware Details===
**Chamber C: N2O = 200 sccm, N2 = 5000 sccm, NF3 = 1000 sccm, NH3 = 100 sccm, SiH4 = 300 sccm, CF4 = 5000 sccm, N2O = 2000 sccm.
* Pressure Regulation: Closed loop via process chamber 10T baratron pressure gauge and foreline throttle valve
* Single frequency RF – 1000 watts @ 13.56Mhz delivered to chambers through an auto-matching networks.
* Lamp heated for 200-400C process temperatures
===Substrate Requirements===
* This tool has a cassette load station for 150mm diameter wafers. Processing of 100mm diameter and smaller samples is enabled by use of carrier wafers with a 100mm diameter recessed area. Do NOT use any mounting material (like Crystalbond, Santovac, etc).
* Substrate Materials:** Silicon** High Purity Fused Silica 4" wafers and samples as long thick as they 1mm have been processed through a pre-furnace clean in the old RCA Clean Bench 81 on carrier wafers without issue. Wafers or samples thicker than standard wafer thicknesses will have higher deposition rates and slightly different film parameters than indicated in bay 1440A with an extended 1 minute 10:1 HF etchcharacterization data.
<!--* Wafer type
* Any mounting?
===Material Restrictions===
* High Purity Fused Silica wafers as long as they have been processed through a pre-furnace clean in the old RCA Clean Bench 81 in bay 1440A with an extended 1 minute 10:1 HF etch.
*Only the following metals are allowed as long as they have not been deposited in Lab18-01: aluminum, titanium, molybdenum, tantalum, tungsten, nickel, platinum, and chromium
{{material restrictions}}
