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Reactive ion etching (RIE) is a high resolution mechanism for [[etching]] materials using [[Plasma etching|reactive gas discharges]]. It is a highly controllable process that can process a wide variety of materials, including [[semiconductors]], [[dielectrics]] and some [[Reactive metals|metals]]. One major advantage to RIE over other forms of etching is that the process can be designed to be highly [[Isotropy|anisotropic]], allowing for much finer resolution and higher aspect ratios. For a detailed overview of RIE, please review the [https://docsdrive.google.com/a/lnf.umich.edu/file/d/0B76AgohVTgqdamFiaE1mRk9mVmM/preview view?usp=sharing&resourcekey=0-yGk7A8kAmb0kQArcKPNlTQ technology workshop].