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LAM 9400/Processes/LNF HfO2

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[[Category:Processes]] [[Category:RIE]]
{{note|This process requires more than the standard chamber clean.|remindererror}}
This recipe is designed to etch HfO<sub>2</sub>. Since Hf byproducts may not be effectively removed by the standard waferless autoclean we require a post etch process to be run to generate SiCl<sub>4</sub> which is effective at cleaning Hf. The recipe "Wafer_Clean_SiCl4" needs to be run on a blank Si wafer for 5 min after etching HfO2 in this process.
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