Difference between revisions of "Sputter deposition"
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|image = [[File:Sputter Deposition.png|center|300px]] | |image = [[File:Sputter Deposition.png|center|300px]] | ||
|caption = | |caption = | ||
| − | |materials = [[Silver|Ag]], [[Aluminum|Al]], [[Aluminum oxide|Al2O3]], [[Gold|Au]], [[Chromium|Cr]], [[Copper|Cu]], [[Iron|Fe]], [[Germanium|Ge]], [[Indium|In]], [[Nickel|Ni | + | |materials = [[Silver|Ag]], [[Aluminum|Al]], [[Aluminum oxide|Al2O3]], [[Gold|Au]], [[Chromium|Cr]], [[Copper|Cu]], [[Iron|Fe]], [[Germanium|Ge]], [[Indium|In]], [[Nickel|Ni]], [[Platinum|Pt]], [[Silicon dioxide|SiO2]], [[Titanium|Ti]], [[Titanium dioxide|TiO2]], [[Zinc|Zn]] |
|mask = | |mask = | ||
| − | |size = 4", 3" and 2" wafers, pieces | + | |size = 6", 4", 3" and 2" wafers, pieces |
|chemicals = | |chemicals = | ||
| − | |gases = | + | |gases = Ar, N2, O2 1%, O2 0.1% |
|overview = [[Wikipedia:Sputter_deposition|General Overview: Wikipedia Sputter Deposition]] | |overview = [[Wikipedia:Sputter_deposition|General Overview: Wikipedia Sputter Deposition]] | ||
|sop = | |sop = | ||
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<!--[[File:Electron_Beam_Evaporation.jpg|right|300px]]--> | <!--[[File:Electron_Beam_Evaporation.jpg|right|300px]]--> | ||
| − | [[Wikipedia: | + | [[Wikipedia:Sputter_deposition|Sputter Deposition]] is a physical vapor deposition (PVD) method of thin film deposition by sputtering. This involves ejecting material from a "target" that is a source onto a "substrate" such as a silicon wafer. Resputtering is re-emission of the deposited material during the deposition process by ion or atom bombardment. Sputtered atoms ejected from the target have a wide energy distribution, typically up to tens of eV (100,000 K). The sputtered ions (typically only a small fraction of the ejected particles are ionized — on the order of 1%) can ballistically fly from the target in straight lines and impact energetically on the substrates or vacuum chamber (causing resputtering). |
==LNF Capabilities== | ==LNF Capabilities== | ||
<!--A more general description of what the tool is capable of doing.--> | <!--A more general description of what the tool is capable of doing.--> | ||
| − | *The LNF has 4 | + | *The LNF has 4 Sputter Deposition Tools |
| − | ** [[ | + | ** [[Lab 18-1|Lab 18-1]] |
| − | ** [[ | + | ** [[Lab 18-2|Lab 18-2]] |
| − | ** [[ | + | ** [[Tegal ALN Sputter|Tegal ALN Sputter]] |
| − | ** [[ | + | ** [[Denton Explorer-14|Denton Explorer-14]] |
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**[[Gold|Gold (Au)]] | **[[Gold|Gold (Au)]] | ||
**[[Germanium|Germanium(Ge)]] | **[[Germanium|Germanium(Ge)]] | ||
| − | |||
**[[Iron|Iron(Fe)]] | **[[Iron|Iron(Fe)]] | ||
| − | |||
**[[Nickel|Nickel (Ni)]] | **[[Nickel|Nickel (Ni)]] | ||
| − | |||
| − | |||
**[[Platinum|Platinum(Pt)]] | **[[Platinum|Platinum(Pt)]] | ||
**[[Silicon dioxide|Silicon dioxide(SiO2)]] | **[[Silicon dioxide|Silicon dioxide(SiO2)]] | ||
| − | **[[Silicon | + | **[[Silicon nitride|Silicon nitride(SiN)]] |
**[[Silver|Silver(Ag)]] | **[[Silver|Silver(Ag)]] | ||
| − | |||
**[[Titanium|Titanium(Ti)]] | **[[Titanium|Titanium(Ti)]] | ||
**[[Titanium dioxide|Titanium dioxide(TiO2)]] | **[[Titanium dioxide|Titanium dioxide(TiO2)]] | ||
**[[Zinc|Zinc(Zn)]] | **[[Zinc|Zinc(Zn)]] | ||
| − | |||
==References== | ==References== | ||
*[[Wikipedia:Sputter_deposition|General Overview: Wikipedia Sputter Deposition]] | *[[Wikipedia:Sputter_deposition|General Overview: Wikipedia Sputter Deposition]] | ||
Revision as of 10:16, 10 July 2015
| Sputter deposition | |
|---|---|
 | |
| Equipment Details | |
| Technology | PVD |
| Materials Restriction | Metals |
| Material Processed | Ag, Al, Al2O3, Au, Cr, Cu, Fe, Ge, In, Ni, Pt, SiO2, Ti, TiO2, Zn |
| Sample Size | 6", 4", 3" and 2" wafers, pieces |
| Gases Used | Ar, N2, O2 1%, O2 0.1% |
| Equipment Manual | |
| Overview | General Overview: Wikipedia Sputter Deposition |
 Warning: | This page has not been released yet. |
Sputter Deposition is a physical vapor deposition (PVD) method of thin film deposition by sputtering. This involves ejecting material from a "target" that is a source onto a "substrate" such as a silicon wafer. Resputtering is re-emission of the deposited material during the deposition process by ion or atom bombardment. Sputtered atoms ejected from the target have a wide energy distribution, typically up to tens of eV (100,000 K). The sputtered ions (typically only a small fraction of the ejected particles are ionized — on the order of 1%) can ballistically fly from the target in straight lines and impact energetically on the substrates or vacuum chamber (causing resputtering).
LNF Capabilities
- The LNF has 4 Sputter Deposition Tools
- The Following Materials can be deposited using Electron Beam Evaporation
