Difference between revisions of "Sputter deposition"
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m (Kjvowen moved page Sputter Deposition to Sputter deposition) |
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** [[Lab 18-1|Lab 18-1]] | ** [[Lab 18-1|Lab 18-1]] | ||
** [[Lab 18-2|Lab 18-2]] | ** [[Lab 18-2|Lab 18-2]] | ||
− | ** [[ | + | ** [[AMS 2004 Aluminum Nitride Sputter Tool|AMS 2004 Aluminum Nitride Sputter Tool]] |
** [[Denton Explorer-14|Denton Explorer-14]] | ** [[Denton Explorer-14|Denton Explorer-14]] | ||
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**[[Titanium dioxide|Titanium dioxide(TiO2)]] | **[[Titanium dioxide|Titanium dioxide(TiO2)]] | ||
**[[Zinc|Zinc(Zn)]] | **[[Zinc|Zinc(Zn)]] | ||
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==References== | ==References== | ||
*[[Wikipedia:Sputter_deposition|General Overview: Wikipedia Sputter Deposition]] | *[[Wikipedia:Sputter_deposition|General Overview: Wikipedia Sputter Deposition]] |
Revision as of 12:16, 6 August 2015
Sputter deposition | |
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|center|300px][File:Sputter Deposition.png|center|300px]] | |
Equipment Details | |
Technology | PVD |
Materials Restriction | Metals |
Material Processed | Ag, Al, Al2O3, Au, Cr, Cu, Fe, Ge, Ni, Pt, SiO2, Ti, TiO2, Zn |
Sample Size | 6", 4", 3" and 2" wafers, Pieces |
Gases Used | Ar, N2, O2 1%, O2 0.1% |
Equipment Manual | |
Overview | General Overview: Wikipedia Sputter Deposition |
This page has not been released yet. |
Sputter Deposition is a physical vapor deposition (PVD) method of thin film deposition by sputtering. This involves ejecting material from a "target" that is a source onto a "substrate" such as a silicon wafer. Resputtering is re-emission of the deposited material during the deposition process by ion or atom bombardment. Sputtered atoms ejected from the target have a wide energy distribution, typically up to tens of eV (100,000 K). The sputtered ions (typically only a small fraction of the ejected particles are ionized — on the order of 1%) can ballistically fly from the target in straight lines and impact energetically on the substrates or vacuum chamber (causing resputtering).
LNF Capabilities
- The LNF has 4 Sputter Deposition Tools
- The Following Materials can be deposited using Electron Beam Evaporation