Difference between revisions of "Sputter deposition"

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[[Wikipedia:Sputter_deposition|Sputter Deposition]] is a physical vapor deposition (PVD) method of thin film deposition by sputtering. This involves ejecting material from a "target" that is a source onto a "substrate" such as a silicon wafer. Resputtering is re-emission of the deposited material during the deposition process by ion or atom bombardment. Sputtered atoms ejected from the target have a wide energy distribution, typically up to tens of eV (100,000 K). The sputtered ions (typically only a small fraction of the ejected particles are ionized — on the order of 1%) can ballistically fly from the target in straight lines and impact energetically on the substrates or vacuum chamber (causing resputtering).
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[[Wikipedia:Sputter_deposition|Sputter Deposition]] is a physical vapor deposition (PVD) method of thin film deposition in which a high-purity source material (called a target) is subjected to a gas plasma (typically Ar.)    The energetic atoms in this gas plasma collide with the target material and knock off source atoms which then travel to the substrate and condense into a thin film.
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==LNF Capabilities==
 
==LNF Capabilities==

Revision as of 11:45, 6 January 2016

< Capabilities


Sputter deposition
Sputter Deposition.png
|center|300px][File:Sputter Deposition.png|center|300px]]
Equipment Details
Technology PVD
Materials Restriction Metals
Material Processed Ag, Al, Al2O3, Au, Cr, Cu, Fe, Ge, Ni, Pt, SiO2, Ti, TiO2, Zn
Sample Size 6", 4", 3" and 2" wafers, Pieces
Gases Used Ar, N2, O2 1%, O2 0.1%
Equipment Manual
Overview General Overview: Wikipedia Sputter Deposition


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Sputter Deposition is a physical vapor deposition (PVD) method of thin film deposition in which a high-purity source material (called a target) is subjected to a gas plasma (typically Ar.) The energetic atoms in this gas plasma collide with the target material and knock off source atoms which then travel to the substrate and condense into a thin film.


LNF Capabilities


References