Difference between revisions of "Sputter deposition"

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[[Wikipedia:Sputter_deposition|Sputter Deposition]] is a physical vapor deposition (PVD) method of thin film deposition in which a high-purity source material (called a target) is subjected to a gas plasma (typically Ar.)    The energetic atoms in this gas plasma collide with the target material and knock off source atoms which then travel to the substrate and condense into a thin film.
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[[Wikipedia:Sputter_deposition|Sputter Deposition]] is a physical vapor deposition (PVD) method of thin film deposition in which a high-purity source material (called a cathode or target) is subjected to a gas plasma (typically Ar.)    The energetic atoms in this gas plasma collide with the target material and knock off source atoms which then travel to the substrate and condense into a thin film.
  
  

Revision as of 10:46, 6 January 2016

Capabilities


Sputter deposition
Sputter Deposition.png
|center|300px][File:Sputter Deposition.png|center|300px]]
Equipment Details
Technology PVD
Materials Restriction Metals
Material Processed Ag, Al, Al2O3, Au, Cr, Cu, Fe, Ge, Ni, Pt, SiO2, Ti, TiO2, Zn
Sample Size 6", 4", 3" and 2" wafers, Pieces
Gases Used Ar, N2, O2 1%, O2 0.1%
Equipment Manual
Overview General Overview: Wikipedia Sputter Deposition


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Sputter Deposition is a physical vapor deposition (PVD) method of thin film deposition in which a high-purity source material (called a cathode or target) is subjected to a gas plasma (typically Ar.) The energetic atoms in this gas plasma collide with the target material and knock off source atoms which then travel to the substrate and condense into a thin film.


LNF Capabilities


References