Difference between revisions of "Sputter deposition"
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|image = Sputter Deposition.png | |image = Sputter Deposition.png | ||
|caption = | |caption = | ||
|materials = [[Silver|Ag]], [[Aluminum|Al]], [[Aluminum oxide|Al2O3]], [[Gold|Au]], [[Chromium|Cr]], [[Copper|Cu]], [[Iron|Fe]], [[Germanium|Ge]], [[Nickel|Ni]], [[Platinum|Pt]], [[Silicon dioxide|SiO2]], [[Titanium|Ti]], [[Titanium dioxide|TiO2]], [[Zinc|Zn]] | |materials = [[Silver|Ag]], [[Aluminum|Al]], [[Aluminum oxide|Al2O3]], [[Gold|Au]], [[Chromium|Cr]], [[Copper|Cu]], [[Iron|Fe]], [[Germanium|Ge]], [[Nickel|Ni]], [[Platinum|Pt]], [[Silicon dioxide|SiO2]], [[Titanium|Ti]], [[Titanium dioxide|TiO2]], [[Zinc|Zn]] | ||
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| − | [[ | + | [[{{PAGENAME}}]] is a [[physical vapor deposition]] method of thin film deposition in which a high-purity source material (called a cathode or target) is subjected to a gas plasma (typically [[argon]]). The energetic atoms in this gas plasma collide with the target material and knock off source atoms which then travel to the substrate and condense into a thin film. |
| − | ==Figures of | + | ==Method of operation== |
| + | {{expand section}} | ||
| + | |||
| + | ==Applications== | ||
| + | {{expand section}} | ||
| + | |||
| + | ==Figures of merit== | ||
| + | {{cleanup|section|reason=the subsection headings are wordy and there is a lot more depth than necessary}} | ||
The figures of merit are described in the generic [[Physical vapor deposition | PVD]] page | The figures of merit are described in the generic [[Physical vapor deposition | PVD]] page | ||
| − | ===Responses of | + | ===Responses of figures of merit with parameter changes=== |
====Deposition Rate, Stress, Resistivity and Step Coverage==== | ====Deposition Rate, Stress, Resistivity and Step Coverage==== | ||
Although many films (especially reactive films and insulating compounds) may vary in their response, typical sputtering variables can be summarized in this trend chart: | Although many films (especially reactive films and insulating compounds) may vary in their response, typical sputtering variables can be summarized in this trend chart: | ||
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**In the ALN tool, the wafer is centered over two targets which are larger than the substrate. Uniformity can be only be adjusted using the DC supply which raises and lowers the power to the center target. | **In the ALN tool, the wafer is centered over two targets which are larger than the substrate. Uniformity can be only be adjusted using the DC supply which raises and lowers the power to the center target. | ||
| − | == | + | ==Materials== |
| − | + | The following materials can be deposited using Magnetron{{clarify}} sputter deposition at the LNF. | |
| − | *The LNF has 4 | + | *[[Aluminum|Aluminum(Al)]] |
| + | *[[Aluminum oxide|Aluminum oxide(Al2O3)]] | ||
| + | *[[Chromium|Chromium(Cr)]] | ||
| + | *[[Copper|Copper(Cu)]] | ||
| + | *[[Gold|Gold (Au)]] | ||
| + | *[[Germanium|Germanium(Ge)]] | ||
| + | *[[Iron|Iron(Fe)]] | ||
| + | *[[Nickel|Nickel (Ni)]] | ||
| + | *[[Platinum|Platinum(Pt)]] | ||
| + | *[[Silicon dioxide|Silicon dioxide(SiO2)]] | ||
| + | *[[Silicon nitride|Silicon nitride(SiN)]] | ||
| + | *[[Silver|Silver(Ag)]] | ||
| + | *[[Titanium|Titanium(Ti)]] | ||
| + | *[[Titanium dioxide|Titanium dioxide(TiO2)]] | ||
| + | *[[Zinc|Zinc(Zn)]] | ||
| + | |||
| + | ==Equipment== | ||
| + | The LNF has 4 sputter deposition tools | ||
** [[Lab 18-1|Lab 18-1]] | ** [[Lab 18-1|Lab 18-1]] | ||
** [[Lab 18-2|Lab 18-2]] | ** [[Lab 18-2|Lab 18-2]] | ||
** [[AMS 2004 Aluminum Nitride Sputter Tool|AMS 2004 Aluminum Nitride Sputter Tool]] | ** [[AMS 2004 Aluminum Nitride Sputter Tool|AMS 2004 Aluminum Nitride Sputter Tool]] | ||
** [[Denton Explorer-14|Denton Explorer-14]] | ** [[Denton Explorer-14|Denton Explorer-14]] | ||
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===Lab 18-1=== | ===Lab 18-1=== | ||
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*The AMS tool is designed specifically for Piezoelectric AlN on 4" wafers. It is a high temperature process that works only on certain substrates with specific seeding matetrials and the handler is only designed for 4" wafers are this time. | *The AMS tool is designed specifically for Piezoelectric AlN on 4" wafers. It is a high temperature process that works only on certain substrates with specific seeding matetrials and the handler is only designed for 4" wafers are this time. | ||
| + | ==See also== | ||
| + | * [[Physical vapor deposition]] | ||
| + | * [[Deposition]] | ||
| + | * [[:Category:PVD equipment|List of PVD equipment]] | ||
| + | <!-- | ||
==References== | ==References== | ||
| + | <references /> | ||
| + | --> | ||
| + | ==Further reading== | ||
*[[Wikipedia:Sputter_deposition|General Overview: Wikipedia Sputter Deposition]] | *[[Wikipedia:Sputter_deposition|General Overview: Wikipedia Sputter Deposition]] | ||
Revision as of 12:45, 16 February 2016
| Sputter deposition | |
|---|---|
 | |
| Technology Details | |
| Technology | PVD |
| Materials | Ag, Al, Al2O3, Au, Cr, Cu, Fe, Ge, Ni, Pt, SiO2, Ti, TiO2, Zn |
Sputter deposition is a physical vapor deposition method of thin film deposition in which a high-purity source material (called a cathode or target) is subjected to a gas plasma (typically argon). The energetic atoms in this gas plasma collide with the target material and knock off source atoms which then travel to the substrate and condense into a thin film.
Contents
Method of operation
![[icon]](/wiki/File:Wiki_letter_w.svg){kind=small} | This section requires expansion. |
Applications
| This section requires expansion. |
Figures of merit
 | This section may require cleanup to meet the LNF wiki's quality standards. The specific problem is: the subsection headings are wordy and there is a lot more depth than necessary. |
The figures of merit are described in the generic PVD page
Responses of figures of merit with parameter changes
Deposition Rate, Stress, Resistivity and Step Coverage
Although many films (especially reactive films and insulating compounds) may vary in their response, typical sputtering variables can be summarized in this trend chart:
Uniformity
Uniformity is set by the material being deposited and the geometry of the system: throw distance, target size, substrate rotation and deposition angle.
- In sputtering, uniformity is determined by throw distance and the shape of the deposition cone.
- In the Denton and Lab 18 tools, smaller sources eject material from the face of a 3" target that is angled to cover around 1/2 of the substrate area. The substrate is rotated to coat the entire area. Varying the angle will vary the throw distance and change the amount deposited on the center and edge. The supplies have a set throw angle that is optimized for best uniformity.
- In the ALN tool, the wafer is centered over two targets which are larger than the substrate. Uniformity can be only be adjusted using the DC supply which raises and lowers the power to the center target.
Materials
The following materials can be deposited using Magnetron[clarification needed] sputter deposition at the LNF.
- Aluminum(Al)
- Aluminum oxide(Al2O3)
- Chromium(Cr)
- Copper(Cu)
- Gold (Au)
- Germanium(Ge)
- Iron(Fe)
- Nickel (Ni)
- Platinum(Pt)
- Silicon dioxide(SiO2)
- Silicon nitride(SiN)
- Silver(Ag)
- Titanium(Ti)
- Titanium dioxide(TiO2)
- Zinc(Zn)
Equipment
The LNF has 4 sputter deposition tools
Lab 18-1
Main article: Lab 18-1
- Materials Deposited: Al2O3, ITO, Mo, Si, SiO2, Si3N4, Ta, Ta2O5, Ti, TiO2
- Lab 18-1 is a loadlocked magnetron sputter tool used for depositing metals, insulators, optical and semiconductive films. It has a variable-gated turbo pump and more sensitive gas flows that allow it to run more sensitive gas ratios (<1%) for reactive sputtering. It has a DC supply for conductive materials and RF supplies for electrically insulating materials. Deposition rates vary by material but are generally mich slower for RF depositions. The tool supports 5 materials at a time, rotated using the 18-1 Target Change Calendar
Lab 18-2
Main article: Lab 18-2
- Materials: Al,Cr,Cu,Au,Ir,Ni,Pt,Ag,Ti
- Lab 18-2 is a loadlocked magnetron sputter tool used for mostly for depositing metals. It uses DC for conductive materials and RF for electrically insulating materials. Deposition rates vary by material but are generally slower for RF depositions. The tool supports 5 materials at a time, rotated using the 18-2 Target Change Calendar
Denton Explorer
Main article: Denton Explorer
- The Denton Explorer is an open-loop 2-source magnetron sputter tool used as a Lab 18 backup for depositing metal films
AMS 2004 Aluminum Nitride Sputter Tool
Main article: AMS 2004 Aluminum Nitride Sputter Tool
- Materials deposited: AlN, Al
- The AMS tool is designed specifically for Piezoelectric AlN on 4" wafers. It is a high temperature process that works only on certain substrates with specific seeding matetrials and the handler is only designed for 4" wafers are this time.
