Difference between revisions of "Sputter deposition"

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m (Kjvowen moved page Sputter Deposition to Sputter deposition)
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** [[Lab 18-1|Lab 18-1]]
 
** [[Lab 18-1|Lab 18-1]]
 
** [[Lab 18-2|Lab 18-2]]
 
** [[Lab 18-2|Lab 18-2]]
** [[Tegal ALN Sputter|Tegal ALN Sputter]]
+
** [[AMS 2004 Aluminum Nitride Sputter Tool|AMS 2004 Aluminum Nitride Sputter Tool]]
 
** [[Denton Explorer-14|Denton Explorer-14]]
 
** [[Denton Explorer-14|Denton Explorer-14]]
  
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**[[Titanium dioxide|Titanium dioxide(TiO2)]]
 
**[[Titanium dioxide|Titanium dioxide(TiO2)]]
 
**[[Zinc|Zinc(Zn)]]
 
**[[Zinc|Zinc(Zn)]]
 
  
 
==References==
 
==References==
 
*[[Wikipedia:Sputter_deposition|General Overview: Wikipedia Sputter Deposition]]
 
*[[Wikipedia:Sputter_deposition|General Overview: Wikipedia Sputter Deposition]]

Revision as of 11:16, 6 August 2015


Sputter deposition
Sputter Deposition.png
|center|300px][File:Sputter Deposition.png|center|300px]]
Equipment Details
Technology PVD
Materials Restriction Metals
Material Processed Ag, Al, Al2O3, Au, Cr, Cu, Fe, Ge, Ni, Pt, SiO2, Ti, TiO2, Zn
Sample Size 6", 4", 3" and 2" wafers, Pieces
Gases Used Ar, N2, O2 1%, O2 0.1%
Equipment Manual
Overview General Overview: Wikipedia Sputter Deposition


Warning Warning: This page has not been released yet.

Sputter Deposition is a physical vapor deposition (PVD) method of thin film deposition by sputtering. This involves ejecting material from a "target" that is a source onto a "substrate" such as a silicon wafer. Resputtering is re-emission of the deposited material during the deposition process by ion or atom bombardment. Sputtered atoms ejected from the target have a wide energy distribution, typically up to tens of eV (100,000 K). The sputtered ions (typically only a small fraction of the ejected particles are ionized — on the order of 1%) can ballistically fly from the target in straight lines and impact energetically on the substrates or vacuum chamber (causing resputtering).

LNF Capabilities


References