Sputter deposition
Revision as of 10:29, 31 July 2015 by Kjvowen (talk | contribs) (Kjvowen moved page Sputter Deposition to Sputter deposition)
| Sputter deposition | |
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| Equipment Details | |
| Technology | PVD |
| Materials Restriction | Metals |
| Material Processed | Ag, Al, Al2O3, Au, Cr, Cu, Fe, Ge, Ni, Pt, SiO2, Ti, TiO2, Zn |
| Sample Size | 6", 4", 3" and 2" wafers, Pieces |
| Gases Used | Ar, N2, O2 1%, O2 0.1% |
| Equipment Manual | |
| Overview | General Overview: Wikipedia Sputter Deposition |
 Warning: | This page has not been released yet. |
Sputter Deposition is a physical vapor deposition (PVD) method of thin film deposition by sputtering. This involves ejecting material from a "target" that is a source onto a "substrate" such as a silicon wafer. Resputtering is re-emission of the deposited material during the deposition process by ion or atom bombardment. Sputtered atoms ejected from the target have a wide energy distribution, typically up to tens of eV (100,000 K). The sputtered ions (typically only a small fraction of the ejected particles are ionized — on the order of 1%) can ballistically fly from the target in straight lines and impact energetically on the substrates or vacuum chamber (causing resputtering).
LNF Capabilities
- The LNF has 4 Sputter Deposition Tools
- The Following Materials can be deposited using Electron Beam Evaporation
