|Material Processed||Ag, Al, Al2O3, Au, Cr, Cu, Fe, Ge, In, Ni, Pt, SiO2, Ti, TiO2, Zn|
|Sample Size||6", 4", 3" and 2" wafers, pieces|
|Gases Used||Ar, N2, O2 1%, O2 0.1%|
|Overview||General Overview: Wikipedia Sputter Deposition|
|Warning:||This page has not been released yet.|
Sputter Deposition is a physical vapor deposition (PVD) method of thin film deposition by sputtering. This involves ejecting material from a "target" that is a source onto a "substrate" such as a silicon wafer. Resputtering is re-emission of the deposited material during the deposition process by ion or atom bombardment. Sputtered atoms ejected from the target have a wide energy distribution, typically up to tens of eV (100,000 K). The sputtered ions (typically only a small fraction of the ejected particles are ionized — on the order of 1%) can ballistically fly from the target in straight lines and impact energetically on the substrates or vacuum chamber (causing resputtering).
- The Following Materials can be deposited using Electron Beam Evaporation