Difference between revisions of "Tempress S1T2 - LTO 4""
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|gases = [[Nitrogen|N<sub>2</sub>]], [[Oxygen|O<sub>2</sub>]], [[Silane|SiH<sub>4</sub>]] | |gases = [[Nitrogen|N<sub>2</sub>]], [[Oxygen|O<sub>2</sub>]], [[Silane|SiH<sub>4</sub>]] | ||
|overview = [[{{PAGENAME}}#System_Overview | System Overview]] | |overview = [[{{PAGENAME}}#System_Overview | System Overview]] | ||
| − | |sop = [https://docs.google.com/document/d/1OwR52cfcxqd580bLlHpUAx3OpyCa3hjq9Q63d8lPoHA/ | + | |sop = [https://docs.google.com/document/d/1OwR52cfcxqd580bLlHpUAx3OpyCa3hjq9Q63d8lPoHA/preview SOP] |
| − | |processes = [[ | + | |processes = [[LTO]] |
|maintenance = [[{{PAGENAME}}#Maintenance | Maintenance]] | |maintenance = [[{{PAGENAME}}#Maintenance | Maintenance]] | ||
}} | }} | ||
| − | The Tempress diffusion system is a modular horizontal furnace designed to process silicon wafers as part of the manufacturing technology of semiconductor, optical, [[MEMS]], and solar devices. LTO is formed by using a process called LPCVD, Low Pressure Chemical Vapor Deposition. Chemical vapor deposition forms thin films on the surface of a substrate by thermal decomposition and/or reaction of gaseous compounds. The desired material is deposited directly from the gas phase onto the surface of the wafer. The important factors are gas ratio, temperature, and pressure. | + | The Tempress diffusion system is a modular horizontal furnace designed to process silicon wafers as part of the manufacturing technology of semiconductor, optical, [[MEMS]], and solar devices. [[LTO]] is formed by using a process called [[LPCVD]], Low Pressure Chemical Vapor Deposition. Chemical vapor deposition forms thin films on the surface of a substrate by thermal decomposition and/or reaction of gaseous compounds. The desired material is deposited directly from the gas phase onto the surface of the wafer. The important factors are gas ratio, temperature, and pressure. |
==Announcements== | ==Announcements== | ||
| Line 18: | Line 18: | ||
==Capabilities== | ==Capabilities== | ||
| − | * [[ | + | * [[Silicon dioxide|Low Temperature Oxide]] - LTO |
| − | * Maximum Thickness - | + | * Maximum Thickness - 2µm |
==System Overview== | ==System Overview== | ||
| Line 32: | Line 32: | ||
* Pieces up to 100 mm (4") | * Pieces up to 100 mm (4") | ||
* Can process up to 25, 100 mm (4") wafers | * Can process up to 25, 100 mm (4") wafers | ||
| − | + | {{note|All samples must go through the [[RCA Bench 81|RCA Pre-Furnace clean]] procedure before being processed in the furnace|reminder}} | |
===Material Restrictions=== | ===Material Restrictions=== | ||
| Line 38: | Line 38: | ||
==Supported Processes== | ==Supported Processes== | ||
| − | * [[LTO]] | + | * [[Silicon dioxide|LTO]] - Low temperature oxide |
===Process Details=== | ===Process Details=== | ||
| − | * [https://docs.google.com/spreadsheets/d/1cDX90cTHuPSMZejvni2-JhEw3GoGFJBnLKC8QG6rDW0/preview#gid=277895757 | + | * [https://docs.google.com/spreadsheets/d/1cDX90cTHuPSMZejvni2-JhEw3GoGFJBnLKC8QG6rDW0/preview#gid=277895757 Process recipe overview] |
===Characterization Data=== | ===Characterization Data=== | ||
| − | * [https://docs.google.com/spreadsheets/d/1UUWHyJu2hqcF4dG7UPVhik6zyYSVGKUyvBuujMDwrVo/edit#gid=1363230001 LTO] | + | * [https://docs.google.com/spreadsheets/d/1UUWHyJu2hqcF4dG7UPVhik6zyYSVGKUyvBuujMDwrVo/edit#gid=1363230001 LTO - Low temperature oxide] |
==Standard Operating Procedure== | ==Standard Operating Procedure== | ||
| − | * [https://docs.google.com/document/d/1OwR52cfcxqd580bLlHpUAx3OpyCa3hjq9Q63d8lPoHA/preview | + | * [https://docs.google.com/document/d/1OwR52cfcxqd580bLlHpUAx3OpyCa3hjq9Q63d8lPoHA/preview Quick reference SOP] |
| + | * [https://docs.google.com/document/d/12iBrxud7Ge4Pw6b4us1srWDu0t42nBhhx96OBM5pmeg/edit?usp=sharing Detailed SOP] | ||
==Checkout Procedure== | ==Checkout Procedure== | ||
| − | |||
# Create a [http://ssel-sched.eecs.umich.edu/sselScheduler/ResourceContact.aspx?tabindex=3&path=0:0:0:{{#var:toolid}} Help desk Ticket] requesting training. | # Create a [http://ssel-sched.eecs.umich.edu/sselScheduler/ResourceContact.aspx?tabindex=3&path=0:0:0:{{#var:toolid}} Help desk Ticket] requesting training. | ||
| − | # | + | # LNF staff will schedule a time for initial training. After completing training the user can attempt a checkout session. It may be necessary for some users to participate in more than one training session, prior to attempting check out. |
| − | # Schedule a checkout session with a tool engineer via the | + | # Schedule a checkout session with a tool engineer via the existing Helpdesk ticket. If this checkout is successful, the engineer will authorize you on the tool. |
==Maintenance== | ==Maintenance== | ||
| − | * Maintenance is performed on the tool, after | + | * Maintenance is performed on the tool, after 30-40µm of accumulated deposition. |
* Maintenance consists of replacing the following quartz parts within the tube. | * Maintenance consists of replacing the following quartz parts within the tube. | ||
** Cage | ** Cage | ||
** Twin rods | ** Twin rods | ||
** Bridge for twin rods | ** Bridge for twin rods | ||
| − | ** | + | ** Thermocouple sheath |
** SiH<sub>4</sub> injector | ** SiH<sub>4</sub> injector | ||
** O<sub>2</sub> injector | ** O<sub>2</sub> injector | ||
** Dummy wafers | ** Dummy wafers | ||
| + | |||
| + | * Tube is replaced at 100µm of accumulated deposition. | ||
Revision as of 14:48, 11 January 2022
| Tempress S1T2 - LTO 4" | |
|---|---|
 | |
| Equipment Details | |
| Technology | LPCVD |
| Materials Restriction | CMOS Clean |
| Sample Size | Pieces up to 100 mm (4") |
| Gases Used | N2, O2, SiH4 |
| Equipment Manual | |
| Overview | System Overview |
| Operating Procedure | SOP |
| Supported Processes | LTO |
| Maintenance | Maintenance |
The Tempress diffusion system is a modular horizontal furnace designed to process silicon wafers as part of the manufacturing technology of semiconductor, optical, MEMS, and solar devices. LTO is formed by using a process called LPCVD, Low Pressure Chemical Vapor Deposition. Chemical vapor deposition forms thin films on the surface of a substrate by thermal decomposition and/or reaction of gaseous compounds. The desired material is deposited directly from the gas phase onto the surface of the wafer. The important factors are gas ratio, temperature, and pressure.
Contents
Announcements
- There are no announcements at this time.
Capabilities
- Low Temperature Oxide - LTO
- Maximum Thickness - 2µm
System Overview
Hardware Details
- N2 - Maximum flow 1 slpm
- N2 - Maximum flow 10 slpm
- O2 - Maximum flow 500 sccm
- SiH4 - Maximum flow 100 sccm
Substrate Requirements
- Silicon only
- Pieces up to 100 mm (4")
- Can process up to 25, 100 mm (4") wafers
All samples must go through the RCA Pre-Furnace clean procedure before being processed in the furnace
Material Restrictions
The Tempress S1T2 - LTO 4" is designated as a CMOS Clean class tool. Below is a list of approved materials for the tool. Approved means the material is allowed in the tool under normal circumstances. If a material is not listed, please create a helpdesk ticket or email info@lnf.umich.edu for any material requests or questions.
Approved materials
Supported Processes
- LTO - Low temperature oxide
Process Details
Characterization Data
Standard Operating Procedure
Checkout Procedure
- Create a Help desk Ticket requesting training.
- LNF staff will schedule a time for initial training. After completing training the user can attempt a checkout session. It may be necessary for some users to participate in more than one training session, prior to attempting check out.
- Schedule a checkout session with a tool engineer via the existing Helpdesk ticket. If this checkout is successful, the engineer will authorize you on the tool.
Maintenance
- Maintenance is performed on the tool, after 30-40µm of accumulated deposition.
- Maintenance consists of replacing the following quartz parts within the tube.
- Cage
- Twin rods
- Bridge for twin rods
- Thermocouple sheath
- SiH4 injector
- O2 injector
- Dummy wafers
- Tube is replaced at 100µm of accumulated deposition.
