Difference between revisions of "Tempress S1T2 - LTO 4""
Line 58: | Line 58: | ||
==Standard Operating Procedure== | ==Standard Operating Procedure== | ||
<!-- To include a document from google docs, use the line below, replace "googledocid" with the ID for the document. Remember, to make this visible, you must set Sharing for the document to "Anyone with the link can view". --> | <!-- To include a document from google docs, use the line below, replace "googledocid" with the ID for the document. Remember, to make this visible, you must set Sharing for the document to "Anyone with the link can view". --> | ||
− | [d/1OwR52cfcxqd580bLlHpUAx3OpyCa3hjq9Q63d8lPoHA/ | + | [d/1OwR52cfcxqd580bLlHpUAx3OpyCa3hjq9Q63d8lPoHA/ Operating Procedure] |
==Checkout Procedure== | ==Checkout Procedure== |
Revision as of 14:53, 31 July 2015
Tempress S1T2 - LTO 4" | |
---|---|
Equipment Details | |
Technology | LPCVD |
Materials Restriction | CMOS Clean |
Sample Size | Pieces up to 100mm (4") |
Gases Used | N2, O2, SiH4 |
Equipment Manual | |
Overview | System Overview |
Operating Procedure | SOP |
Supported Processes | Supported Processes |
User Processes | User Processes |
Maintenance | Maintenance |
This page has not been released yet. |
The Tempress diffusion system is a modular horizontal furnace designed to process silicon wafers as part of the manufacturing technology of semiconductor, optical, MEMS, and solar devices. LTO is formed by using a process called LPCVD, Low Pressure Chemical Vapor Deposition. Chemical vapor deposition forms thin films on the surface of a substrate by thermal decomposition and/or reaction of gaseous compounds. The desired material is deposited directly from the gas phase onto the surface of the wafer. The important factors are gas ratio, temperature, and pressure.
Contents
Announcements
- There are no announcements at this time.
Capabilities
- LTO - Low Temperature Oxide
- Maximum Thickness - 12 µm
System Overview
Hardware Details
- N2 - Maximum flow 1 slpm
- N2 - Maximum flow 10 slpm
- O2 - Maximum flow 500 sccm
- SiH4 - Maximum flow 100 sccm
Substrate Requirements
- Silicon only
- Pieces up to 100mm (4")
- Can process up to 25, 100mm (4") wafers
- All samples must go through the RCA Pre-Furnace clean procedure before being processed in the furnace
Material Restrictions
The Tempress S1T2 - LTO 4" is designated as a CMOS Clean class tool. Below is a list of approved materials for the tool. Approved means the material is allowed in the tool under normal circumstances. If a material is not listed, please create a helpdesk ticket or email info@lnf.umich.edu for any material requests or questions.
Supported Processes
There are several processes for this tool supported by the LNF, which are described in more detail on the Processes page.
In addition to these, this tool has a number of user-created recipes for etching a wide variety of materials. Some of these recipes are documented on Tempress S1T2 - LTO 4" User Processes. If you are curious if your material can be processed in this tool, please contact the tool engineers via the helpdesk ticket system.
Standard Operating Procedure
[d/1OwR52cfcxqd580bLlHpUAx3OpyCa3hjq9Q63d8lPoHA/ Operating Procedure]
Checkout Procedure
- Read through this page and the Standard Operating Procedure above.
- Complete the training request form here.
- Create a Helpdesk Ticket requesting training.
- A tool engineer will schedule a time for initial training.
- Practice with your mentor or another authorized user until you are comfortable with tool operation.
- Complete the SOP quiz here.
- Schedule a checkout session with a tool engineer via the helpdesk ticket system. If this checkout is successful, the engineer will authorize you on the tool.
Maintenance
Process Name