View source for Tempress S1T3 - N-type in Situ Doped Poly-Si 6"

{{#vardefine:toolid|33031}} {{#vardefine:technology|LPCVD}} {{#vardefine:restriction|1}}
{{infobox equipment
|caption = 
|materials = 
|mask =
|size = Pieces up to 150 mm (6")
|chemicals =
|gases = [[Nitrogen|N<sub>2</sub>]], [[Silane|SiH<sub>4</sub>]], [[Phosphine|5% PH<sub>3</sub>/SiH<sub>4</sub>]]
|overview = [[{{PAGENAME}}#System_overview | System Overview]]
|sop = [https://docs.google.com/document/d/191OLQadlDQpteJk0I97whgtwzdQkcSIdTnOohP5Gfgo/edit SOP]
|processes =  [[{{PAGENAME}}#Supported_processes | N-type in-situ doped polysilicon]]
|maintenance = [[{{PAGENAME}}#Maintenance | Maintenance]]
}}
The Tempress diffusion system is a modular horizontal furnace designed to process silicon wafers as part of the manufacturing technology of semiconductor, optical, [[MEMS]], and solar devices. In-situ doped polysilicon is formed by using a process called LPCVD, Low Pressure Chemical Vapor Deposition. Chemical vapor deposition forms thin films on the surface of a substrate by thermal decomposition and/or reaction of gaseous compounds. The desired material is deposited directly from the gas phase onto the surface of the wafer. Doping is achieved by adding dopant gases such as PH<sub>3</sub> (N-type), or BCl<sub>3</sub> (P-type) to the deposition gases. The important factors are gas ratio, temperature, and pressure.


==Announcements==
* There are no announcements at this time.

==Capabilities==
* [[N-type in-situ doped polysilicon]]
* Maximum Thickness - 2µm

==System overview==
===Hardware details===
* [[Nitrogen|N<sub>2</sub>]] - Maximum flow 10 slpm
* [[Silane|SiH<sub>4</sub>]] - Maximum flow 300 sccm
* [[Phosphine|5% PH<sub>3</sub>/SiH<sub>4</sub>]] - Maximum flow 100 sccm

===Substrate requirements===
* [[Silicon]] only
* 150 mm (6") only
* Can process up to 25, 150 mm (6") wafers
{{note|All samples must go through the [[RCA Bench 81|RCA Pre-Furnace clean]] procedure before being processed in the furnace|reminder}}

===Material restrictions===
{{material restrictions}}

==Supported processes== 
* [[N-type in-situ doped polysilicon]]

===Process details===
* [https://docs.google.com/spreadsheets/d/18ZjyMH3ab2EIfVOpIBprYrwEZJjvQ-oNeQ1CjponugI/preview#gid=356082669 Process recipe overview]

===Characterization data===
* [https://docs.google.com/spreadsheets/d/1gFL-VD008a8_et9x31GhROmOCxtx7ZVbfHopb6yFLyQ/preview#gid=1279718632 N-type in-situ doped polysilicon]

==Standard operating procedure==
* [https://docs.google.com/document/d/1haEoMzklPy5DDzvBoKKvFxx9mW_1EPtmOp03E86YYug/preview Quick reference SOP]
* [https://docs.google.com/document/d/12iBrxud7Ge4Pw6b4us1srWDu0t42nBhhx96OBM5pmeg/edit?usp=sharing Detailed SOP]

==Checkout procedure==
# Create a [http://ssel-sched.eecs.umich.edu/sselScheduler/ResourceContact.aspx?tabindex=3&path=0:0:0:{{#var:toolid}} Help desk Ticket] requesting training.
# LNF staff will schedule a time for initial training. After completing training the user can attempt a checkout session. It may be necessary for some users to participate in more than one training session, prior to attempting check out.
# Schedule a checkout session with a tool engineer via the existing Helpdesk ticket. If this checkout is successful, the engineer will authorize you on the tool.

==Maintenance== 
* Maintenance is performed on the tool, after 20µm of accumulated deposition. 
* Maintenance consists of replacing the following quartz parts within the tube. 
** Cage
** Twin rods
** Bridge for twin rods
** Thermocouple sheath
** 5% PH<sub>3</sub>/SiH<sub>4</sub> injector
** Dummy wafers

* Tube is replaced at 100µm of accumulated deposition.