View source for Tempress S2T2 - Nitride-HTO 4"

{{#vardefine:toolid|30081}}{{#vardefine:technology|LPCVD}}{{#vardefine:restriction|1}}{{infobox equipment
|caption = 
|materials = 
|mask =
|size = 100mm
|chemicals =
|gases = [[Nitrogen|N<sub>2</sub>]], [[Dichlorosilane|SiH<sub>2</sub>Cl<sub>2</sub>]], [[Nitrous Oxide|N<sub>2</sub>O]], [[Ammonia|NH<sub>3</sub>]]
|overview = [[{{PAGENAME}}#System_overview | System Overview]]
|sop = [https://link.to.google.doc/preview SOP]
|processes = [[{{PAGENAME}}#Supported_processes|Nitride, HTO]]
|maintenance = [[{{PAGENAME}}#Maintenance | Maintenance]]
}}
The Tempress diffusion system is a modular horizontal furnace designed to process silicon wafers as part of the manufacturing technology of semiconductor, optical, [[MEMS]], and solar devices. HTO (High Temperature Oxide), Nitride, Oxynitride, and Lower Stress Nitride are formed by using a process called [[LPCVD]], Low Pressure Chemical Vapor Deposition. Chemical vapor deposition forms thin films on the surface of a substrate by thermal decomposition and/or reaction of gaseous compounds. The desired material is deposited directly from the gas phase onto the surface of the wafer. The important factors are gas ratio, temperature, and pressure.

==Announcements==
* The tube is having film quality issues and is not currently characterized. Users can run the tool but it is at your own risk. Please create a helpdesk ticket if you would like to run this tool.

==Capabilities==
* [[Silicon Dioxide|High Temperature Oxide]] (HTO)
* [[Silicon Nitride]]
* [[Oxynitride]]
* [[LSN|Lower Stress Nitride]] (LSN)

* Maximum Thickness
** HTO = 2µm
** Silicon Nitride = 7000Å
** Oxynitride = 1µm
** LSN = 2µm

==System overview==
===Hardware details===
* Maximum Temperature - 900°C
* [[Nitrogen|N<sub>2</sub>]] - Maximum flow 10 slpm
* [[Nitrogen|N<sub>2</sub>]] - Maximum flow 1000 sccm
* [[Dichlorosilane|SiH<sub>2</sub>Cl<sub>2</sub>]] - Maximum flow 200 sccm
* [[Nitrous Oxide|N<sub>2</sub>O]] - Maximum flow 500 sccm
* [[Ammonia|NH<sub>3</sub>]] - Maximum flow 500 sccm

===Substrate requirements===
* [[Silicon]] only
* Can process up to 25, 100 mm (4") wafers
* Wafer thickness, ~525um for 100mm (4")
{{note|All samples must go through the [[RCA Bench 81|RCA Pre-Furnace clean]] procedure before being processed in the furnace|reminder}}

===Material restrictions===
{{material restrictions}}

==Supported processes== 
* [[Silicon dioxide|High temperature oxide]] (HTO)
* [[Silicon nitride]]
* [[Oxynitride]]
* [[LSN]]



===Process details===
* [https://docs.google.com/spreadsheets/d/1WlGMWf8A5UORCKt6Syd8FexKJEf4XO5nTZNRhw8uNeA/preview#gid=1942938288 Process recipe overview]

===Characterization data===
* [https://docs.google.com/spreadsheets/d/1Ba7SgOL2hwk_0SsCCWKc60sjUJO9jraXz7bQND5T9fE/preview#gid=335166449 HTO]
* [https://docs.google.com/spreadsheets/d/1eu5-BpDr2DPlyofkOw1qghFxmCy0WwNeujBKbWFS28Y/preview#gid=335166449 Nitride]
* [https://docs.google.com/spreadsheets/d/1wRjbDQZkx0IIFBM2pP1CRxG4MP3GbfCN9ijIJ19H5rQ/preview#gid=335166449 Oxynitride]
* [https://docs.google.com/spreadsheets/d/19dg4e1uvucZAfXae-UEPoNUXtkduuCEJnkGyJhLEgII/preview#gid=335166449 LSN]

==Standard operating procedure==
* [https://docs.google.com/document/d/16lkegfHFrnAW0NsSYvv-F9uCWbcXKwwDLV_8H20rW6s/preview Quick reference SOP]
* [https://docs.google.com/document/d/12iBrxud7Ge4Pw6b4us1srWDu0t42nBhhx96OBM5pmeg/edit?usp=sharing detailed SOP]

==Checkout procedure==
# Create a [http://ssel-sched.eecs.umich.edu/sselScheduler/ResourceContact.aspx?tabindex=3&path=0:0:0:{{#var:toolid}} Help desk Ticket] requesting training.
# LNF staff will schedule a time for initial training. After completing training the user can attempt a checkout session. It may be necessary for some users to participate in more than one training session, prior to attempting check out.
# Schedule a checkout session with a tool engineer via the existing Helpdesk ticket. If this checkout is successful, the engineer will authorize you on the tool.

==Maintenance== 
* Paddle - cleaned every 3-6µm of accumulated deposition.
* Boats, and dummy wafers are replaced every 3-6 µm of accumulated deposition.
* Tube is replaced at 100µm of accumulated deposition.