Difference between revisions of "Tempress S2T2 - Nitride-HTO 4""
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| − | + | {{#vardefine:toolid|30081}}{{#vardefine:technology|LPCVD}}{{#vardefine:restriction|1}}{{infobox equipment | |
| − | {{#vardefine:toolid|30081}} | ||
| − | |||
| − | {{#vardefine:technology|LPCVD}} | ||
| − | |||
| − | {{#vardefine:restriction|1}} | ||
| − | {{infobox equipment | ||
|caption = | |caption = | ||
|materials = | |materials = | ||
|mask = | |mask = | ||
| − | |size = Pieces up to | + | |size = Pieces up to 150 mm (6") |
|chemicals = | |chemicals = | ||
|gases = [[Nitrogen|N<sub>2</sub>]], [[Dichlorosilane|SiH<sub>2</sub>Cl<sub>2</sub>]], [[Nitrous Oxide|N<sub>2</sub>O]], [[Ammonia|NH<sub>3</sub>]] | |gases = [[Nitrogen|N<sub>2</sub>]], [[Dichlorosilane|SiH<sub>2</sub>Cl<sub>2</sub>]], [[Nitrous Oxide|N<sub>2</sub>O]], [[Ammonia|NH<sub>3</sub>]] | ||
| − | |overview = [[{{PAGENAME}}# | + | |overview = [[{{PAGENAME}}#System_overview | System Overview]] |
|sop = [https://link.to.google.doc/preview SOP] | |sop = [https://link.to.google.doc/preview SOP] | ||
| − | |processes = [[Nitride | + | |processes = [[{{PAGENAME}}#Supported_processes|Nitride, HTO]] |
|maintenance = [[{{PAGENAME}}#Maintenance | Maintenance]] | |maintenance = [[{{PAGENAME}}#Maintenance | Maintenance]] | ||
}} | }} | ||
| − | |||
| − | |||
| − | |||
The Tempress diffusion system is a modular horizontal furnace designed to process silicon wafers as part of the manufacturing technology of semiconductor, optical, [[MEMS]], and solar devices. [[HTO]] (High Temperature Oxide), and [[Nitride]], are formed by using a process called [[LPCVD]], Low Pressure Chemical Vapor Deposition. Chemical vapor deposition forms thin films on the surface of a substrate by thermal decomposition and/or reaction of gaseous compounds. The desired material is deposited directly from the gas phase onto the surface of the wafer. The important factors are gas ratio, temperature, and pressure. | The Tempress diffusion system is a modular horizontal furnace designed to process silicon wafers as part of the manufacturing technology of semiconductor, optical, [[MEMS]], and solar devices. [[HTO]] (High Temperature Oxide), and [[Nitride]], are formed by using a process called [[LPCVD]], Low Pressure Chemical Vapor Deposition. Chemical vapor deposition forms thin films on the surface of a substrate by thermal decomposition and/or reaction of gaseous compounds. The desired material is deposited directly from the gas phase onto the surface of the wafer. The important factors are gas ratio, temperature, and pressure. | ||
==Announcements== | ==Announcements== | ||
| − | * | + | * New wands - Vespel is a softer material and should do less damage to double sided polished wafers. The drawback to Vespel is that it can't take as much heat as a quartz wand tip. The maximum sustainable temperature for Vespel is 288C. So make sure you allow enough time for the wafers to cool prior to handling them. Once the boat has traveled all the way out of the tube you will need at least 10 minutes for the storage tube and a minimum of 15 minutes for tubes |
==Capabilities== | ==Capabilities== | ||
| − | * [[Nitride]] | + | * [[Silicon Nitride]] |
| − | * [[ | + | * [[Silicon Dioxide|High Temperature Oxide]] (HTO) |
* Maximum Thickness | * Maximum Thickness | ||
| − | ** Nitride = | + | ** Nitride = 7000Å |
| − | ** HTO = | + | ** HTO = 2µm |
| − | ==System | + | ==System overview== |
| − | ===Hardware | + | ===Hardware details=== |
* Maximum Temperature - 900°C | * Maximum Temperature - 900°C | ||
* [[Nitrogen|N<sub>2</sub>]] - Maximum flow 10 slpm | * [[Nitrogen|N<sub>2</sub>]] - Maximum flow 10 slpm | ||
| Line 41: | Line 32: | ||
* [[Ammonia|NH<sub>3</sub>]] - Maximum flow 500 sccm | * [[Ammonia|NH<sub>3</sub>]] - Maximum flow 500 sccm | ||
| − | ===Substrate | + | ===Substrate requirements=== |
* [[Silicon]] only | * [[Silicon]] only | ||
| − | * | + | * 150 mm (6") only |
| − | * Can process up to 25, | + | * Can process up to 25, 150 mm (6") wafers |
{{note|All samples must go through the [[RCA Bench 81|RCA Pre-Furnace clean]] procedure before being processed in the furnace|reminder}} | {{note|All samples must go through the [[RCA Bench 81|RCA Pre-Furnace clean]] procedure before being processed in the furnace|reminder}} | ||
| − | ===Material | + | ===Material restrictions=== |
{{material restrictions}} | {{material restrictions}} | ||
| − | ==Supported | + | ==Supported processes== |
| − | * [[ | + | * [[Silicon nitride]] |
| − | * [[ | + | * [[Silicon dioxide|High temperature oxide]] (HTO) |
| + | |||
| − | ===Process | + | ===Process details=== |
| − | * [https://docs.google.com/spreadsheets/d/1WlGMWf8A5UORCKt6Syd8FexKJEf4XO5nTZNRhw8uNeA/ | + | * [https://docs.google.com/spreadsheets/d/1WlGMWf8A5UORCKt6Syd8FexKJEf4XO5nTZNRhw8uNeA/preview#gid=1942938288 Process recipe overview] |
| − | ===Characterization | + | ===Characterization data=== |
| − | * [https://docs.google.com/spreadsheets/d/ | + | * [https://docs.google.com/spreadsheets/d/1eu5-BpDr2DPlyofkOw1qghFxmCy0WwNeujBKbWFS28Y/preview#gid=335166449 Nitride] |
| − | * [https://docs.google.com/spreadsheets/d/1Up5jobqBAn4gKFfAM6Q42QKqKBcKIZqzX_a3GuEhb-E/ | + | * [https://docs.google.com/spreadsheets/d/1Up5jobqBAn4gKFfAM6Q42QKqKBcKIZqzX_a3GuEhb-E/preview#gid=6113289 HTO] |
| − | ==Standard | + | ==Standard operating procedure== |
| − | * [https://docs.google.com/document/d/ | + | * [https://docs.google.com/document/d/16lkegfHFrnAW0NsSYvv-F9uCWbcXKwwDLV_8H20rW6s/preview Quick reference SOP] |
| + | * [https://docs.google.com/document/d/12iBrxud7Ge4Pw6b4us1srWDu0t42nBhhx96OBM5pmeg/edit?usp=sharing detailed SOP] | ||
| − | ==Checkout | + | ==Checkout procedure== |
| − | |||
# Create a [http://ssel-sched.eecs.umich.edu/sselScheduler/ResourceContact.aspx?tabindex=3&path=0:0:0:{{#var:toolid}} Help desk Ticket] requesting training. | # Create a [http://ssel-sched.eecs.umich.edu/sselScheduler/ResourceContact.aspx?tabindex=3&path=0:0:0:{{#var:toolid}} Help desk Ticket] requesting training. | ||
| − | # | + | # LNF staff will schedule a time for initial training. After completing training the user can attempt a checkout session. It may be necessary for some users to participate in more than one training session, prior to attempting check out. |
| − | # Schedule a checkout session with a tool engineer via the | + | # Schedule a checkout session with a tool engineer via the existing Helpdesk ticket. If this checkout is successful, the engineer will authorize you on the tool. |
==Maintenance== | ==Maintenance== | ||
| − | * Paddle - cleaned every 3- | + | * Paddle - cleaned every 3-6µm of accumulated deposition. |
| − | * Boats, and dummy wafers are | + | * Boats, and dummy wafers are replaced every 3-6 µm of accumulated deposition. |
| + | * Tube is replaced at 100µm of accumulated deposition. | ||
Revision as of 12:45, 12 August 2022
| Tempress S2T2 - Nitride-HTO 4" | |
|---|---|
 | |
| Equipment Details | |
| Technology | LPCVD |
| Materials Restriction | CMOS Clean |
| Sample Size | Pieces up to 150 mm (6") |
| Gases Used | N2, SiH2Cl2, N2O, NH3 |
| Equipment Manual | |
| Overview | System Overview |
| Operating Procedure | SOP |
| Supported Processes | Nitride, HTO |
| Maintenance | Maintenance |
The Tempress diffusion system is a modular horizontal furnace designed to process silicon wafers as part of the manufacturing technology of semiconductor, optical, MEMS, and solar devices. HTO (High Temperature Oxide), and Nitride, are formed by using a process called LPCVD, Low Pressure Chemical Vapor Deposition. Chemical vapor deposition forms thin films on the surface of a substrate by thermal decomposition and/or reaction of gaseous compounds. The desired material is deposited directly from the gas phase onto the surface of the wafer. The important factors are gas ratio, temperature, and pressure.
Contents
Announcements
- New wands - Vespel is a softer material and should do less damage to double sided polished wafers. The drawback to Vespel is that it can't take as much heat as a quartz wand tip. The maximum sustainable temperature for Vespel is 288C. So make sure you allow enough time for the wafers to cool prior to handling them. Once the boat has traveled all the way out of the tube you will need at least 10 minutes for the storage tube and a minimum of 15 minutes for tubes
Capabilities
- Silicon Nitride
- High Temperature Oxide (HTO)
- Maximum Thickness
- Nitride = 7000Å
- HTO = 2µm
System overview
Hardware details
- Maximum Temperature - 900°C
- N2 - Maximum flow 10 slpm
- N2 - Maximum flow 1000 sccm
- SiH2Cl2 - Maximum flow 200 sccm
- N2O - Maximum flow 500 sccm
- NH3 - Maximum flow 500 sccm
Substrate requirements
- Silicon only
- 150 mm (6") only
- Can process up to 25, 150 mm (6") wafers
All samples must go through the RCA Pre-Furnace clean procedure before being processed in the furnace
Material restrictions
The Tempress S2T2 - Nitride-HTO 4" is designated as a CMOS Clean class tool. Below is a list of approved materials for the tool. Approved means the material is allowed in the tool under normal circumstances. If a material is not listed, please create a helpdesk ticket or email info@lnf.umich.edu for any material requests or questions.
Approved materials
Supported processes
Process details
Characterization data
Standard operating procedure
Checkout procedure
- Create a Help desk Ticket requesting training.
- LNF staff will schedule a time for initial training. After completing training the user can attempt a checkout session. It may be necessary for some users to participate in more than one training session, prior to attempting check out.
- Schedule a checkout session with a tool engineer via the existing Helpdesk ticket. If this checkout is successful, the engineer will authorize you on the tool.
Maintenance
- Paddle - cleaned every 3-6µm of accumulated deposition.
- Boats, and dummy wafers are replaced every 3-6 µm of accumulated deposition.
- Tube is replaced at 100µm of accumulated deposition.
