Difference between revisions of "Tempress S2T2 - Nitride-HTO 6""

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{{#vardefine:toolid|30081}}{{#vardefine:technology|LPCVD}}{{#vardefine:restriction|1}}{{infobox equipment
{{#vardefine:toolid|30081}}
 
<!-- Set the Process Technology (see subcategories on Equipment page) -->
 
{{#vardefine:technology|LPCVD}}
 
<!-- Set the Material Restriction Level: 1 = CMOS Clean, 2 = Semi-Clean, 3 = Metals -->
 
{{#vardefine:restriction|1}}
 
{{infobox equipment
 
 
|caption =  
 
|caption =  
 
|materials =  
 
|materials =  
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|chemicals =
 
|chemicals =
 
|gases = [[Nitrogen|N<sub>2</sub>]], [[Dichlorosilane|SiH<sub>2</sub>Cl<sub>2</sub>]], [[Nitrous Oxide|N<sub>2</sub>O]], [[Ammonia|NH<sub>3</sub>]]
 
|gases = [[Nitrogen|N<sub>2</sub>]], [[Dichlorosilane|SiH<sub>2</sub>Cl<sub>2</sub>]], [[Nitrous Oxide|N<sub>2</sub>O]], [[Ammonia|NH<sub>3</sub>]]
|overview = [[{{PAGENAME}}#System_Overview | System Overview]]
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|overview = [[{{PAGENAME}}#System_overview | System Overview]]
 
|sop = [https://link.to.google.doc/preview SOP]
 
|sop = [https://link.to.google.doc/preview SOP]
|processes = [[Nitride]], [[HTO]]
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|processes = [[{{PAGENAME}}#Supported_processes|Nitride, HTO]]
 
|maintenance = [[{{PAGENAME}}#Maintenance | Maintenance]]
 
|maintenance = [[{{PAGENAME}}#Maintenance | Maintenance]]
 
}}
 
}}
 
{{warning|This page has not been released yet.}}
 
 
 
The Tempress diffusion system is a modular horizontal furnace designed to process silicon wafers as part of the manufacturing technology of semiconductor, optical, [[MEMS]], and solar devices. [[HTO]] (High Temperature Oxide), and [[Nitride]], are formed by using a process called [[LPCVD]], Low Pressure Chemical Vapor Deposition. Chemical vapor deposition forms thin films on the surface of a substrate by thermal decomposition and/or reaction of gaseous compounds. The desired material is deposited directly from the gas phase onto the surface of the wafer. The important factors are gas ratio, temperature, and pressure.
 
The Tempress diffusion system is a modular horizontal furnace designed to process silicon wafers as part of the manufacturing technology of semiconductor, optical, [[MEMS]], and solar devices. [[HTO]] (High Temperature Oxide), and [[Nitride]], are formed by using a process called [[LPCVD]], Low Pressure Chemical Vapor Deposition. Chemical vapor deposition forms thin films on the surface of a substrate by thermal decomposition and/or reaction of gaseous compounds. The desired material is deposited directly from the gas phase onto the surface of the wafer. The important factors are gas ratio, temperature, and pressure.
  
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** HTO = 1.2 µm
 
** HTO = 1.2 µm
  
==System Overview==
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==System overview==
===Hardware Details===
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===Hardware details===
 
* Maximum Temperature - 900°C
 
* Maximum Temperature - 900°C
 
* [[Nitrogen|N<sub>2</sub>]] - Maximum flow 10 slpm
 
* [[Nitrogen|N<sub>2</sub>]] - Maximum flow 10 slpm
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* [[Ammonia|NH<sub>3</sub>]] - Maximum flow 500 sccm
 
* [[Ammonia|NH<sub>3</sub>]] - Maximum flow 500 sccm
  
===Substrate Requirements===
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===Substrate requirements===
 
* [[Silicon]] only
 
* [[Silicon]] only
 
* Pieces up to 150 mm (6")
 
* Pieces up to 150 mm (6")
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{{note|All samples must go through the [[RCA Bench 81|RCA Pre-Furnace clean]] procedure before being processed in the furnace|reminder}}
 
{{note|All samples must go through the [[RCA Bench 81|RCA Pre-Furnace clean]] procedure before being processed in the furnace|reminder}}
  
===Material Restrictions===
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===Material restrictions===
 
{{material restrictions}}
 
{{material restrictions}}
  
==Supported Processes==  
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==Supported processes==  
 
* [[Nitride]]
 
* [[Nitride]]
 
* [[HTO]] (High Temperature Oxide)
 
* [[HTO]] (High Temperature Oxide)
  
===Process Details===
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===Process details===
* [https://docs.google.com/spreadsheets/d/1WlGMWf8A5UORCKt6Syd8FexKJEf4XO5nTZNRhw8uNeA/edit#gid=1942938288 Process recipe overview]
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* [https://docs.google.com/spreadsheets/d/1WlGMWf8A5UORCKt6Syd8FexKJEf4XO5nTZNRhw8uNeA/preview#gid=1942938288 Process recipe overview]
  
===Characterization Data===
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===Characterization data===
* [https://docs.google.com/spreadsheets/d/1ahvPO00KKMVTXTjIc2tIQTEDTGBvwWDuQ60ZjzSC7Hc/edit#gid=143400956 Nitride]
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* [https://docs.google.com/spreadsheets/d/1ahvPO00KKMVTXTjIc2tIQTEDTGBvwWDuQ60ZjzSC7Hc/preview#gid=143400956 Nitride]
* [https://docs.google.com/spreadsheets/d/1Up5jobqBAn4gKFfAM6Q42QKqKBcKIZqzX_a3GuEhb-E/edit#gid=6113289 HTO]
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* [https://docs.google.com/spreadsheets/d/1Up5jobqBAn4gKFfAM6Q42QKqKBcKIZqzX_a3GuEhb-E/preview#gid=6113289 HTO]
  
==Standard Operating Procedure==
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==Standard operating procedure==
 
* [https://docs.google.com/document/d/1KsEwsDQHZNHiebMxUfzvoDpNchwxNPlrExVOxUiI9O4/preview SOP]
 
* [https://docs.google.com/document/d/1KsEwsDQHZNHiebMxUfzvoDpNchwxNPlrExVOxUiI9O4/preview SOP]
  
==Checkout Procedure==
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==Checkout procedure==
 
# Read the Standard Operating Procedure above.
 
# Read the Standard Operating Procedure above.
 
# Create a [http://ssel-sched.eecs.umich.edu/sselScheduler/ResourceContact.aspx?tabindex=3&path=0:0:0:{{#var:toolid}} Help desk Ticket] requesting training.
 
# Create a [http://ssel-sched.eecs.umich.edu/sselScheduler/ResourceContact.aspx?tabindex=3&path=0:0:0:{{#var:toolid}} Help desk Ticket] requesting training.

Revision as of 14:20, 25 November 2015

Tempress S2T2 - Nitride-HTO 6"
30081.jpg
Equipment Details
Technology LPCVD
Materials Restriction CMOS Clean
Sample Size Pieces up to 150 mm (6")
Gases Used N2, SiH2Cl2, N2O, NH3
Equipment Manual
Overview System Overview
Operating Procedure SOP
Supported Processes Nitride, HTO
Maintenance Maintenance


The Tempress diffusion system is a modular horizontal furnace designed to process silicon wafers as part of the manufacturing technology of semiconductor, optical, MEMS, and solar devices. HTO (High Temperature Oxide), and Nitride, are formed by using a process called LPCVD, Low Pressure Chemical Vapor Deposition. Chemical vapor deposition forms thin films on the surface of a substrate by thermal decomposition and/or reaction of gaseous compounds. The desired material is deposited directly from the gas phase onto the surface of the wafer. The important factors are gas ratio, temperature, and pressure.

Announcements

  • HTO is not available at this time.

Capabilities

  • Nitride
  • HTO (High Temperature Oxide)
  • Maximum Thickness
    • Nitride = 7000 Å
    • HTO = 1.2 µm

System overview

Hardware details

  • Maximum Temperature - 900°C
  • N2 - Maximum flow 10 slpm
  • N2 - Maximum flow 1000 sccm
  • SiH2Cl2 - Maximum flow 200 sccm
  • N2O - Maximum flow 500 sccm
  • NH3 - Maximum flow 500 sccm

Substrate requirements

  • Silicon only
  • Pieces up to 150 mm (6")
  • Can process up to 25, 150 mm (6") wafers
All samples must go through the RCA Pre-Furnace clean procedure before being processed in the furnace

Material restrictions

The Tempress S2T2 - Nitride-HTO 6" is designated as a CMOS Clean class tool. Below is a list of approved materials for the tool. Approved means the material is allowed in the tool under normal circumstances. If a material is not listed, please create a helpdesk ticket or email info@lnf.umich.edu for any material requests or questions.


Supported processes

Process details

Characterization data

Standard operating procedure

Checkout procedure

  1. Read the Standard Operating Procedure above.
  2. Create a Help desk Ticket requesting training.
  3. A process engineer will schedule a time for initial training. After completing training the user can attempt a checkout session. It may be necessary for some users to participate in more than one training session, prior to attempting check out.
  4. Schedule a checkout session with a tool engineer via the Help desk Ticket system. If this checkout is successful, the engineer will authorize you on the tool.

Maintenance

  • Paddle - cleaned every 3-6 µm of accumulated deposition
  • Boats, and dummy wafers are cleaned, or replaced every 3-6 µm of accumulated deposition