View source for Tempress S3T4 - N-type in Situ Doped Poly-Si 4"

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{{infobox equipment
|caption = 
|materials = 
|mask =
|size = Pieces up to 100 mm (4")
|chemicals =
|gases = [[Nitrogen|N<sub>2</sub>]], [[Silane|SiH<sub>4</sub>]], [[Phosphine|5% PH<sub>3</sub>/SiH<sub>4</sub>]]
|overview = [[{{PAGENAME}}#System_Overview | System Overview]]
|sop = [https://docs.google.com/document/d/1qZPaaxRO8SmHoNWxqv0JKA6XrZseLArj25wEePmCkww/preview SOP]
|processes = [[N-type in-situ doped polysilicon]]
|maintenance = [[{{PAGENAME}}#Maintenance | Maintenance]]
}}

{{warning|This page has not been released yet.}}

The Tempress diffusion system is a modular horizontal furnace designed to process silicon wafers as part of the manufacturing technology of semiconductor, optical, [[MEMS]], and solar devices. In-situ doped polysilicon is formed by using a process called LPCVD, Low Pressure Chemical Vapor Deposition. Chemical vapor deposition forms thin films on the surface of a substrate by thermal decomposition and/or reaction of gaseous compounds. The desired material is deposited directly from the gas phase onto the surface of the wafer. Doping is achieved by adding dopant gases such as PH3 (N-type), or BCL3 (P-type) to the deposition gases. The important factors are gas ratio, temperature, and pressure.

==Announcements==
* There are no announcements at this time.

==Capabilities==
* [[N-type in-situ doped polysilicon]]
* Maximum Thickness - 2µm

==System Overview==
===Hardware Details===
* [[Nitrogen|N<sub>2</sub>]] - Maximum flow 10 slpm
* [[Silane|SiH<sub>4</sub>]] - Maximum flow 300 sccm
* [[Phosphine|5% PH<sub>3</sub>/SiH<sub>4</sub>]] - Maximum flow 100 sccm

===Substrate Requirements===
* [[Silicon]] only
* Pieces up to 100 mm (4")
* Can process up to 25, 100 mm (4"), wafers
{{note|All samples must go through the [[RCA Bench 81|RCA Pre-Furnace clean]] procedure before being processed in the furnace|reminder}}

===Material Restrictions===
{{material restrictions}}

==Supported Processes== 
* [[N-type in-situ doped polysilicon]]

===Process Details===
* [https://docs.google.com/spreadsheets/d/1Zfp_xOMgSNimChEAPVnO5V0Cr7bzZbErMWNeHCFS-dQ/preview#gid=151212424 Process recipe details]

===Characterization Data===
* [https://docs.google.com/spreadsheets/d/1dfkMLxSj8ZlAc8BsYMVn4EeM5KO3VZx4hcKY4yQCdjk/preview#gid=676913618 N-type in-situ doped polysilicon]

==Standard Operating Procedure==
* [https://docs.google.com/document/d/1A7z_hJVJQ4YhScuiG0escoBGOIBxeBPqwe5SAVBRqdU/preview Quick reference SOP]
* [https://docs.google.com/document/d/12iBrxud7Ge4Pw6b4us1srWDu0t42nBhhx96OBM5pmeg/edit?usp=sharing Detailed SOP]

==Checkout Procedure==
# Create a [http://ssel-sched.eecs.umich.edu/sselScheduler/ResourceContact.aspx?tabindex=3&path=0:0:0:{{#var:toolid}} Help desk Ticket] requesting training.
# A process engineer will schedule a time for initial training. After completing training the user can attempt a checkout session. It may be necessary for some users to participate in more than one training session, prior to attempting check out.
# Schedule a checkout session with a tool engineer via the [http://ssel-sched.eecs.umich.edu/sselScheduler/ResourceContact.aspx?tabindex=3&path=0:0:0:{{#var:toolid}} Help desk Ticket] system. If this checkout is successful, the engineer will authorize you on the tool.

==Maintenance== 
* Maintenance is performed on the tool, after 20µm of accumulated deposition. 
* Maintenance consists of replacing the following quartz parts within the tube. 
** Cage
** Twin rods
** Bridge for twin rods
** Thermocouple sheath
** 5% PH<sub>3</sub>/SiH<sub>4</sub> injector
** Dummy wafers

* Tube is replaced at 100µm of accumulated deposition.