View source for Tempress S4T3 - Flat Poly 6"

{{#vardefine:toolid|33051}}{{#vardefine:technology|LPCVD}}{{#vardefine:restriction|1}}{{infobox equipment
|caption = 
|materials = 
|mask =
|size = 150mm
|chemicals =
|gases = [[Nitrogen|N<sub>2</sub>]], [[Silane|SiH<sub>4</sub>]], [[5% Borontrichloride/Helium|5% BCL<sub>3</sub>/He]]
|overview = [[{{PAGENAME}}#System_overview | System Overview]]
|sop = [https://docs.google.com/document/d/1PPH0jGm9oxafuaxpZKuiGS7EmPcPQAOvZfvOm1h6RF4/preview SOP]
|processes = [[{{PAGENAME}}#Supported_processes|P-type in-situ doped polysilicon]]
|maintenance = [[{{PAGENAME}}#Maintenance | Maintenance]]
}}
The Tempress diffusion system is a modular horizontal furnace designed to process silicon wafers as part of the manufacturing technology of semiconductor, optical, MEMS, and solar devices. Polysilicon, Low Stress Poly-Si, and Amorphous silicon are formed by using a process called LPCVD, Low Pressure Chemical Vapor Deposition. Chemical vapor deposition forms thin films on the surface of a substrate by thermal decomposition and/or reaction of gaseous compounds. The desired material is deposited directly from the gas phase onto the surface of the wafer. The important factors are gas ratio, temperature, and pressure.

==Announcements==
* No announcements at this time.

==Capabilities==
* [[Polysilicon]]
* Maximum Thickness - 2µm

==System overview==
===Hardware details===
* [[Nitrogen|N<sub>2</sub>]] - Maximum flow 1000 sccm
* [[Nitrogen|N<sub>2</sub>]] - Maximum flow 10 slpm
* [[Silane|SiH<sub>4</sub>]] - Maximum flow 300 sccm
* [[5% Borontrichloride/Helium|5% BCL<sub>3</sub>/He]] - Maximum flow 100 sccm

===Substrate requirements===
* [[Silicon]] only
* Can process up to 25, 150 mm (6") wafers
* Wafer thickness, ~675um for 150mm (6")
{{note|All samples must go through the [[RCA Bench 81|RCA Pre-Furnace clean]] procedure before being processed in the furnace|reminder}}

===Material restrictions===
{{material restrictions}}

==Supported processes== 
* [[Polysilicon]]

===Process details===
* [https://docs.google.com/spreadsheets/d/17EXCizjsS1XzrMpmIu23y6NpdrlXKgB4x0gcW_FJ24Q/preview#gid=1178271802 Process recipe details]

===Characterization data===
* [https://docs.google.com/spreadsheets/d/1u8ofFJJyTapXKoGfTpDlDkL_SvROHRuQhC9wVaefLPI/preview#gid=1406904160 Polysilicon]

==Standard operating procedure==
* [https://docs.google.com/document/d/1848lBjrK4YCk9Z0AHYl5t_o6rH4tBNcUG861bHi5gpg/preview Quick reference SOP]
* [https://docs.google.com/document/d/12iBrxud7Ge4Pw6b4us1srWDu0t42nBhhx96OBM5pmeg/edit?usp=sharing Detailed SOP]

==Checkout procedure==
# Create a [http://ssel-sched.eecs.umich.edu/sselScheduler/ResourceContact.aspx?tabindex=3&path=0:0:0:{{#var:toolid}} Help desk Ticket] requesting training.
# A process engineer will schedule a time for initial training. After completing training the user can attempt a checkout session. It may be necessary for some users to participate in more than one training session, prior to attempting check out.
# Schedule a checkout session with a tool engineer via the [http://ssel-sched.eecs.umich.edu/sselScheduler/ResourceContact.aspx?tabindex=3&path=0:0:0:{{#var:toolid}} Help desk Ticket] system. If this checkout is successful, the engineer will authorize you on the tool.

==Maintenance== 
* Maintenance is performed on the tool, after 20µm of accumulated deposition. 
* Maintenance consists of replacing the following quartz parts within the tube. 
** Twin rods
** Bridge for twin rods
** Dummy wafers

* Tube is replaced at 100µm of accumulated deposition.