View source for Thermal oxidation

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[[{{PAGENAME}}|{{PAGENAME}}{{#if: {{#var:acronym}} | &nbsp;({{#var:acronym}})|}}]] is a process used to grow a thin layer of oxide (SiO<sub>2</sub>) on silicon semiconductor wafers. 

==Equipment==
===Tempress S3T1 - Dry Oxide===
{{main|Tempress S3T1 - Dry Oxide}}
The Tempress S3T1 furnace tube is a CMOS clean horizontal furnace tube that is used for growing dry oxide. 

===Tempress S3T2- Wet Oxide===
{{main|Tempress S3T2 - Wet Oxide}}
The Tempress S3T2 furnace tube is a CMOS clean horizontal furnace tube that is used for growing dry/wet/dry oxide.

===Tempress S5T2 - Phosphorous Anneal Oxidation===
{{main|Tempress S5T2 - Phosphorous Anneal Oxidation}}
The Tempress S5T2 furnace tube is a CMOS clean horizontal furnace tube that is used for growing dry oxide, on heavily doped phosphorous wafers. 

===Tempress S5T4 - Boron Anneal Oxidation===
{{main|Tempress S5T4 - Boron Anneal Oxidation}}
The Tempress S5T4 furnace tube is a CMOS clean horizontal furnace tube that is used for growing dry oxide, on heavily doped boron wafers. 

===Tempress S6T1 - Annealing===
{{main|Tempress S6T1 - Annealing}}
The Tempress S6T1 furnace tube is a metals allowed horizontal furnace tube that can be used for growing dry oxide.

==Materials==
*Dry oxide
*Wet oxide

==Method of operation==
The thermal oxidation process is performed in a hot walled quartz reactor, called a furnace tube. An oxidizing gas (oxygen) or steam (oxygen + hydrogen) is injected into the reactor which is heated to a high temperature, typically 800° to 1200°C. The high temperature allows oxygen to diffuse into the silicon substrate and react with it, forming silicon dioxide. These reaction are diffusion limited and growth decreases exponentially with time limiting the practical thickness that can be grown.

====Dry Oxidation====
Dry Oxidation happens in the presence of oxygen. The O<sub>2</sub> molecule reacts with the Si on the surface of the wafer to create SiO<sub>2</sub>. For dry oxide films the practical thickness limit is 3000 Å.

====Wet Oxidation====
Wet oxidation uses clean steam, H<sub>2</sub>O. Hence the name wet oxide. In LNF Tempress furnaces, the steam is made H<sub>2</sub> and O<sub>2</sub> sent through a pyrolyzer and converted into H<sub>2</sub>O. The H<sub>2</sub>O molecule is smaller than the O<sub>2</sub> molecule and diffuses through the silicon dioxide layer faster. This allows for the growth of thicker films. A 2um thermal silicon dixoide film is the practical limit in these tools.

==Parameters==

Parameters that affect thermal oxidation are time, and temperature.

===Time===

===Temperature===

==Examples of processing applications==
Thermally grown silicon dioxide is very high quality compared to silicon dioxide deposited by other techniques. It is dense, exhibits high breakdown voltage, and can be uniform and free from impurities and pinhole defects.  Thermal oxide is used for applications where these properties are needed, e.g. in MOS transistor gates, MOS capacitors, and field oxides.

==Complete tool list==
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<categorytree mode=pages> Thermal processing equipment</categorytree>

==See also==

==References==
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==Further reading==
*[http://lnf-wiki.eecs.umich.edu/wiki/User_Resources#LNF_Tech_Talks_.28technology_seminar_series.29 LNF Tech Talk for Thermal oxidation is Coming Soon!]
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